Title :
Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results
Author :
Bauer, F. ; Halder, E. ; Hofmann, K. ; Haddon, H. ; Roggwiller, P. ; Stockmeier, T. ; Bürgler, J. ; Fichtner, Wolfgang ; Müller, S. ; Westermann, M. ; Moret, Jean-Marc ; Vuilleumier, R.
Author_Institution :
ABB Corp. Res. Center, Baden, Switzerland
fDate :
7/1/1991 12:00:00 AM
Abstract :
2.5-kV thyristor devices have been fabricated with integrated MOS controlled n+-emitter shorts and a bipolar turn-on gate using a p-channel DMOS technology. Square-cell geometries with pitch variations ranging from 15 to 30 μm were implemented in one- and two-dimensional arrays with up to 20000 units. The impact of the cell pitch on the turn-off performance and the on-state voltage was studied for arrays with constant cathode area as well as for single-cell structures. By realizing MOS components with submicrometer channel lengths, scaled single cells are shown to turn off with current densities of several kiloamperes per square centimeter at a gate bias of 5 V. In the case of multi-cell ensembles, turn-off performance is limited due to inhomogeneous current distribution. Critical process parameters as well as the device behavior were optimized through multidimensional numerical simulation
Keywords :
metal-insulator-semiconductor devices; semiconductor device models; thyristors; 1D arrays; 2.5 kV; MOS-controlled thyristor; bipolar turn-on gate; cell pitch; constant cathode area; inhomogeneous current distribution; integrated MOS controlled n+-emitter shorts; multidimensional numerical simulation; on-state voltage; p-channel DMOS technology; scaled single cells; single-cell structures; submicrometer channel lengths; turn-off performance; two-dimensional arrays; Circuits; Current density; Insulated gate bipolar transistors; Insulation; MOS devices; Power electronics; Power semiconductor devices; Power semiconductor switches; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
