Title :
Characteristics of the emitter-switched thyristor
Author :
Shekar, M. S S ; Baliga, B.Jayant ; Nandakumar, M. ; Tandon, S. ; Reisman, Arnold
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
The first experimental demonstration of 600-V emitter-switched thyristors fabricated using an IGBT (insulated-gate bipolar transistor) process sequence is reported. The forward drop is less than that for the IGBT, but larger than that for a thyristor by about 0.5 V due to the thyristor current flowing via the MOSFET channel. A unique characteristic observed for these devices, not exhibited by any previous MOS-gated thyristor structures, is gate-controlled current saturation even after thyristor latch-up. Switching tests were performed up to a current density of 1000 A/cm2 on single-unit cells and the measured turn-off times were about 7 μs
Keywords :
equivalent circuits; semiconductor device models; switching; thyristors; 600 V; 7 mus; IGBT process sequence; MOSFET channel; emitter-switched thyristor; gate-controlled current saturation; insulated-gate bipolar transistor; switching characteristics; thyristor latch-up; turn-off times; turnoff times; Cathodes; Circuit testing; Current density; Insulated gate bipolar transistors; Latches; MOSFET circuits; Performance evaluation; Power semiconductor switches; Threshold voltage; Thyristors;
Journal_Title :
Electron Devices, IEEE Transactions on
