Title :
New physical insights and models for high-voltage LDMOST IC CAD
Author :
Kim, Yeong-Seuk ; Fossum, Jerry G. ; Williams, Richard K.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
The lateral DMOST (LDMOST), including an LDD (lightly doped drain) and the inherent BJT (bipolar junction transistor), is studied extensively using the two-dimensional device simulator PISCES. The PISCES simulations provide physical insights into the normal- and reverse-mode operations of the LDMOST, which are used for developing a comprehensive LDD LDMOST model for circuit simulation. In the modeling methodology, the LDD LDMOST is regionally partitioned into three main components (the channel, the drift region, and the BJT), and carrier-transport problems in each component are solved. The composite physical model is implemented in SPICE for HVIC (high-voltage integrated circuit) CAD and is supported by measurements. The modeling methodology is also applicable to the Resurf LDMOST
Keywords :
MOS integrated circuits; circuit CAD; digital simulation; insulated gate field effect transistors; power integrated circuits; semiconductor device models; HVIC; IC CAD; LDMOST; PISCES; Resurf LDMOST; SPICE; bipolar junction transistor; carrier-transport problems; circuit simulation; composite physical model; high-voltage LDMOST; high-voltage integrated circuit; inherent BJT; lateral DMOST; lightly doped drain; modeling methodology; models; reverse-mode operations; two-dimensional device simulator; Circuit simulation; Design automation; Equations; Hybrid integrated circuits; Integrated circuit modeling; Numerical simulation; Robustness; SPICE; Semiconductor devices; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
