New physical insights and models for high-voltage LDMOST IC CAD

Author

Kim, Yeong-Seuk ; Fossum, Jerry G. ; Williams, Richard K.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

38

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

1641

Lastpage

1649

Abstract

The lateral DMOST (LDMOST), including an LDD (lightly doped drain) and the inherent BJT (bipolar junction transistor), is studied extensively using the two-dimensional device simulator PISCES. The PISCES simulations provide physical insights into the normal- and reverse-mode operations of the LDMOST, which are used for developing a comprehensive LDD LDMOST model for circuit simulation. In the modeling methodology, the LDD LDMOST is regionally partitioned into three main components (the channel, the drift region, and the BJT), and carrier-transport problems in each component are solved. The composite physical model is implemented in SPICE for HVIC (high-voltage integrated circuit) CAD and is supported by measurements. The modeling methodology is also applicable to the Resurf LDMOST

Keywords

MOS integrated circuits; circuit CAD; digital simulation; insulated gate field effect transistors; power integrated circuits; semiconductor device models; HVIC; IC CAD; LDMOST; PISCES; Resurf LDMOST; SPICE; bipolar junction transistor; carrier-transport problems; circuit simulation; composite physical model; high-voltage LDMOST; high-voltage integrated circuit; inherent BJT; lateral DMOST; lightly doped drain; modeling methodology; models; reverse-mode operations; two-dimensional device simulator; Circuit simulation; Design automation; Equations; Hybrid integrated circuits; Integrated circuit modeling; Numerical simulation; Robustness; SPICE; Semiconductor devices; Semiconductor process modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.85161

Filename

85161