Title :
Quasi-dielectrically isolated bipolar junction transistor with subcollector fabricated using silicon selective epitaxy
Author :
Gilbert, P.V. ; Neudeck, G.W. ; Denton, J.P. ; Duey, S. J J
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
A novel quasi-dielectrically isolated bipolar junction transistor (QDI-BJT) was developed for intelligent power ICs. Using a combination of junction and dielectric isolation, the QDI-BJT was achieved by selective epitaxial growth (SEG) of single-crystal silicon in an oxide-lined trench. Buried collectors formed by ion implantation and in situ doped SEG silicon drastically reduce collector resistance with no detrimental effects on transistor performance. The emitter-base and collector-base ideality factors at 1.10 and 1.09, respectively, were very close to those of similar devices fabricated in the substrate in the same die, indicating excellent crystal quality of the SEG silicon. Due to the use of a trench structure to facilitate isolation and control the SEG thickness, the QDI process can be used for any application where the thickness and resistivity of the control and power areas are independently optimized
Keywords :
bipolar integrated circuits; bipolar transistors; epitaxial growth; integrated circuit technology; power integrated circuits; power transistors; Si selective epitaxy; buried collectors; crystal quality; dielectric isolation; intelligent power ICs; ion implantation; isolated bipolar junction transistor; junction isolation; oxide-lined trench; quasidielectrically transistor; selective epitaxial growth; subcollector fabrication; Control systems; Costs; Dielectric substrates; Epitaxial growth; Epitaxial layers; Logic circuits; Logic devices; Power integrated circuits; Silicon; Thickness control;
Journal_Title :
Electron Devices, IEEE Transactions on
