DocumentCode :
1357242
Title :
Noise equivalent circuit of a two-mode semiconductor laser with the contribution of both the linear and the nonlinear gain
Author :
Bich-Ha, Tran Thi ; Mollier, Jean-Claude
Author_Institution :
ENSAE, Toulouse, France
Volume :
3
Issue :
2
fYear :
1997
fDate :
4/1/1997 12:00:00 AM
Firstpage :
304
Lastpage :
308
Abstract :
An equivalent circuit model of a semiconductor laser diode and its MDS (microwave and RF design systems) implementation are described that allow a straightforward calculation of the noise characteristics of a laser diode combined with electronic components. This noise equivalent circuit model that is derived from the two-mode rate equations including both the self-saturation and cross-saturation contributions to the nonlinear gain and Langevin noise sources demonstrates the influence of the sl demode on the low-frequency relative intensity noise (RIN) enhancement
Keywords :
equivalent circuits; laser modes; laser noise; laser theory; optical saturation; optical transmitters; semiconductor device models; semiconductor device noise; semiconductor lasers; Langevin noise sources; MDS implementation; cross-saturation contributions; electronic components; linear gain; low-frequency relative intensity noise enhancement; microwave and RF design systems implementation; noise characteristics; noise equivalent circuit; noise equivalent circuit model; nonlinear gain; quivalent circuit model; self-saturation; semiconductor laser diode; sl demode; two-mode rate equations; two-mode semiconductor laser; Circuit noise; Diode lasers; Equivalent circuits; Laser modes; Laser noise; Low-frequency noise; Masers; Radio frequency; Semiconductor device noise; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.605671
Filename :
605671
Link To Document :
بازگشت