DocumentCode :
1357261
Title :
A Single-Trim CMOS Bandgap Reference With a 3\\sigma Inaccuracy of \\pm 0.15% From
Author :
Ge, Guang ; Zhang, Cheng ; Hoogzaad, Gian ; Makinwa, Kofi A A
Volume :
46
Issue :
11
fYear :
2011
Firstpage :
2693
Lastpage :
2701
Abstract :
A CMOS bandgap reference with an inaccuracy of ±0.15% (3 σ) from -40°C to 125°C is presented. In contrast to prior art, it requires only a single trim to achieve this level of precision. A detailed analysis of the various error sources is provided, and techniques to reduce them are discussed. The prototype bandgap reference draws 55 μA from a 1.8 V supply, and occupies 0.12 mm2 in a 0.16 μm CMOS process. Experimental results from two runs show that, with the use of chopping and higher-order curvature correction to remove non-PTAT errors, the residual error of a bandgap reference is mainly PTAT, and can be removed by a single room temperature trim.
Keywords :
CMOS integrated circuits; cutting; energy gap; higher-order curvature correction; nonPTAT error; prototype bandgap reference; residual error; room temperature trim; single-trim CMOS bandgap reference; temperature -40 degC to 125 degC; temperature 293 K to 298 K; CMOS integrated circuits; CMOS technology; Photonic band gap; Resistance; Resistors; Temperature dependence; Temperature distribution; CMOS bandgap reference; Chopping; curvature correction; room temperature trim;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2011.2165235
Filename :
6056712
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