Title :
64°C continuous-wave operation of 1.5-μm vertical-cavity laser
Author :
Margalit, N.M. ; Piprek, Joachim ; Zhang, Shaoting ; Babic, D.I. ; Streubel, K. ; Mirin, Richard P. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
fDate :
4/1/1997 12:00:00 AM
Abstract :
We report on 64°C continuous-wave (CW) operation of a 1.5-μm vertical-cavity laser. This laser consists of two fused AlGaAs-GaAs mirrors with a strain-compensated InGaAsP-InP MQW active region. Selective lateral oxidation is used for current confinement. Minimum room-temperature threshold current is as low as 0.8 mA, and maximum CW output power is as high as 1 mW at 15°C. Pulsed operation is achieved up to 100°C. Current spreading losses and device heating are analyzed in detail. Dynamic parameters such as maximum 3-dB parameters such as maximum, 3-dB bandwidth (4.7 GHz), alpha factor (4.0), and linewidth (39 MHz) are also investigated
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser transitions; optical losses; oxidation; quantum well lasers; μm vertical-cavity laser; 0.8 mA; 1 mW; 1.5 mum; 100 C; 15 C; 4.7 GHz; 64 C; AlGaAs-GaAs; CW operation; InGaAsP-InP; MQW lasers; alpha factor; continuous-wave operation; current confinement; current spreading losses; device heating; dynamic parameters; fused AlGaAs-GaAs mirrors; linewidth; maximum CW output power; minimum room-temperature threshold current; pulsed operation; selective lateral oxidation; strain-compensated InGaAsP-InP active region; Fiber lasers; Heating; Laser fusion; Mirrors; Optical fiber communication; Optical pulses; Oxidation; Semiconductor lasers; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605679
