Title :
Vertical-cavity lasers with an intracavity resonant detector
Author :
Lim, Sui F. ; Li, Gabriel S. ; Yuen, Wupen ; Chang-Hasnain, Constance J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
4/1/1997 12:00:00 AM
Abstract :
We demonstrate the first intracavity quantum-well photodetector within an InGaAs DBR QW VCSEL for top- and bottom-emitting structures. Minimal spontaneous emission is detected by the internal detector. Dark current is on the order of picoamperes, limited by our instrument noise floor. The internal detector demonstrates high insensitivity to external ambient light as compared to an external detector. Combining various measurement techniques, we gain an understanding of such an integration and discuss the various ramifications of the issues surrounding the design, fabrication, and performance of these integrated VCSEL-detectors. This configuration facilitates flexible tailoring of the laser efficiency and the integrated detector responsivity
Keywords :
III-V semiconductors; dark conductivity; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; laser noise; photodetectors; quantum well lasers; semiconductor device noise; semiconductor quantum wells; spontaneous emission; surface emitting lasers; InGaAs; InGaAs DBR QW VCSEL; bottom-emitting structures; dark current; external ambient light; high insensitivity; instrument noise floor; integrated VCSEL-detector design; integrated VCSEL-detector fabrication; integrated detector responsivity; internal detector; intracavity quantum-well photodetector; intracavity resonant detector; laser efficiency; measurement techniques; minimal spontaneous emission detection; picoamperes; top-emitting structures; vertical-cavity lasers; Dark current; Detectors; Distributed Bragg reflectors; Indium gallium arsenide; Laser noise; Photodetectors; Quantum well lasers; Resonance; Spontaneous emission; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605687