Title : 
Multiple-wavelength vertical-cavity surface-emitting laser arrays
         
        
            Author : 
Yuen, Wupen ; Li, Gabriel S. ; Chang-Hasnain, Constance J.
         
        
            Author_Institution : 
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
         
        
        
        
        
            fDate : 
4/1/1997 12:00:00 AM
         
        
        
        
            Abstract : 
Multiple-wavelength vertical-cavity surface-emitting InGaAs QW laser (MW-VCSEL) arrays are fabricated using two patterned-substrate growth techniques both in conjunction with a location-resolvable in situ laser reflectometer in a molecular beam epitaxy (MBE) system. A backside pattern on the substrate is used to induce a temperature profile on the growth surface. In the first technique, we used a temperature-dependent growth rate to create MW-VCSEL´s, whereas for the second, uniform growth was first performed followed by a temperature-dependent redesorption process to create the thickness gradient required for MW-VCSEL´s. We achieved a record wavelength span, accurate and repeatable lasing wavelengths, and reproducible multiple-wavelength VCSEL arrays with high performance. Comparison between the two methods will be discussed
         
        
            Keywords : 
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; semiconductor laser arrays; semiconductor technology; substrates; surface emitting lasers; InGaAs; InGaAs QW lasers; MBE; VCSEL; backside pattern; growth surface; high performance; in situ laser reflectometer; laser wavelength accuracy; location-resolvable; molecular beam epitaxy; multiple-wavelength vertical-cavity surface-emitting laser arrays; patterned-substrate growth techniques; repeatable lasing wavelengths; reproducible multiple-wavelength VCSEL arrays; temperature profile; temperature-dependent growth rate; temperature-dependent redesorption process; thickness gradient; uniform growth; wavelength span; Fiber lasers; Laser modes; Molecular beam epitaxial growth; Monitoring; Optical arrays; Optical surface waves; Semiconductor laser arrays; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
         
        
        
            Journal_Title : 
Selected Topics in Quantum Electronics, IEEE Journal of
         
        
        
        
        
            DOI : 
10.1109/2944.605688