Title :
Realization and characterization of optically pumped GaInN-GaN DFB lasers
Author :
Hofmann, R. ; Wagner, V. ; Gauggel, H.-P. ; Adler, F. ; Ernst, P. ; Bolay, H. ; Sohmer, A. ; Scholz, F. ; Schweizer, H.C.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
fDate :
4/1/1997 12:00:00 AM
Abstract :
Room-temperature (RT) operation of optically pumped GaN-GaInN distributed-feedback (DFB) lasers is demonstrated in the spectral range from 400 to 415 nm. The ridge-waveguide distributed feedback lasers were realized by dry etching on a GaN-GaInN double heterostructure. Laser emission was observed in the entire spectral range of optical gain, which was determined by amplified spontaneous emission (ASE) measurements. The wavelength shift of the distributed feedback laser emission with temperature was investigated. An array of DFB lasers with different grating periods allowed to obtain the spectral dependence of the laser threshold and the effective refractive index of the GaN-GaInN lasers. The lowest laser threshold we achieved was 0.95 MW/cm2
Keywords :
III-V semiconductors; distributed feedback lasers; gallium compounds; indium compounds; laser transitions; optical pumping; ridge waveguides; semiconductor lasers; superradiance; visible spectra; waveguide lasers; 400 to 415 nm; GaInN-GaN; GaN-GaInN double heterostructure; GaN-GaInN lasers; amplified spontaneous emission; distributed-feedback lasers; dry etching; effective refractive index; grating periods; laser threshold; lowest laser threshold; optical gain; optically pumped GaInN-GaN DFB lasers; ridge-waveguide distributed feedback lasers; room-temperature operation; spectral dependence; spectral range; wavelength shift; Distributed feedback devices; Dry etching; Laser excitation; Laser feedback; Optical feedback; Optical pumping; Optical refraction; Optical variables control; Pump lasers; Stimulated emission;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605693
