Title :
Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates
Author :
Xu, S.J. ; Chua, S.J. ; Xiong Zhang ; Zhang, Z.H. ; Luo, C.P. ; Yuan, Z.L. ; Xu, Z.Y. ; Zhou, J.M.
Author_Institution :
Dept. of Mater. Res. & Eng., Nat. Univ. of Singapore, Singapore
fDate :
4/1/1997 12:00:00 AM
Abstract :
Low-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated. The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE). The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate
Keywords :
III-V semiconductors; indium compounds; low-temperature techniques; molecular beam epitaxial growth; monolayers; optical films; photoluminescence; quantum well lasers; semiconductor growth; substrates; (100) GaAs substrates; (311)A substrates; (311)B substrates; GaAs; InAs; InAs layer; InAs monolayer quantum structures; MBE; QW lasers; crystal quality; low-temperature excitation spectra; low-temperature photoluminescence spectra; molecular-beam epitaxy; optical characterization; oriented GaAs substrates; Crystalline materials; Diode lasers; Epitaxial growth; Gallium arsenide; Molecular beam epitaxial growth; Optical materials; Optical superlattices; Photoluminescence; Quantum dot lasers; Substrates;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605695
