Numerical physics of subpicosecond electrical pulse generation by nonuniform gap illumination

Author

Zhou, Xing

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

Volume

32

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1672

Lastpage

1679

Abstract

The physical mechanism of subpicosecond electrical pulse generated by nonuniform illumination of transmission-line gaps is studied in detail using a two-dimensional numerical model. This model agrees very well with existing theories as well as experimental observations and further explains the observed highly nonuniform field distributions, which have been neglected in previous theories. The pulse dependence on light intensity, bias voltage, substrate doping, and beam size and location are studied and discussed. It also confirms that this mechanism should be observable in silicon

Keywords

Monte Carlo methods; high-speed optical techniques; integrated optics; photoconducting devices; pulse generators; semiconductor doping; substrates; beam location; beam size; bias voltage; highly nonuniform field distributions; light intensity; nonuniform gap illumination; nonuniform illumination; numerical physics; photoconducting devices; physical mechanism; pulse dependence; silicon; subpicosecond electrical pulse generation; substrate doping; transmission-line gaps; two-dimensional numerical model; Lighting; Monte Carlo methods; Numerical simulation; Optical propagation; Photoconducting materials; Physics; Poisson equations; Pulse generation; Silicon; Transmission lines;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.535373

Filename

535373