Title :
Effect of recombination in separate-confinement heterostructure (SCH) layers on temperature characteristics of semiconductor lasers
Author :
Kurakake, Hirohide ; Uchida, Toru ; Yamamoto, Tsuyoshi ; Higashi, Toshio ; Ogita, Shouichi ; Kobayashi, Masahiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
4/1/1997 12:00:00 AM
Abstract :
We investigated the effect of recombination in separate-confinement heterostructure (SCH) layers on the temperature characteristics of lasers. It was found that the large dependence of recombination on the threshold carrier density can be used to greatly reduce the characteristic temperature T0. A reduction of recombination in the SCH layer is essential for a high-optical confinement factor in each well. To obtain a high-optical confinement factor in wells at a 1.3-μm emission, we fabricated a laser having a wide bandgap cladding layer by introducing a hetero-epitaxial buffer layer. This laser exhibited a temperature characteristic between that of short and long-wavelength lasers, as was expected from the optical confinement factor per well
Keywords :
Debye temperature; carrier density; claddings; current density; laser transitions; optical films; quantum well lasers; 1.3 mum; SCH layers; characteristic temperature; hetero-epitaxial buffer layer; high-optical confinement factor; large dependence; quantum well lasers; semiconductor lasers; separate-confinement heterostructure layers; temperature characteristic; temperature characteristics; threshold carrier density; wide bandgap cladding layer; Buffer layers; Carrier confinement; Charge carrier density; Laser modes; Laser theory; Laser transitions; Quantum well devices; Radiative recombination; Temperature; Threshold current;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605715
