Passive temperature compensation of uncooled GaInAsP-InP diode lasers using thermal stress

Author

Cohen, Daniel A. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

3

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

649

Lastpage

658

Abstract

Strain arising from differential thermal expansion may be used to compensate the effects of rising temperature and stabilize the operating properties of diode lasers. We have demonstrated this using a 1.58-μm GaInAsP-InP multiquantum-well (MQW) laser mounted on a bimetallic heatsink, obtaining nearly complete stabilization of the modal wavelength and a threshold current equivalent characteristic temperature of 133 K over the temperature range of 20°C to 70°C. The results are successfully modeled by a gain calculation that considers the effects of strain produced by both lattice-mismatched epitaxy and external uniaxial stress

Keywords

III-V semiconductors; compensation; current density; gallium arsenide; heat sinks; indium compounds; laser frequency stability; laser modes; laser theory; laser transitions; physical instrumentation control; quantum well lasers; semiconductor device models; temperature control; thermal expansion; thermal stresses; 1.58 mum; 133 K; 20 to 70 degC; GaInAsP-InP; GaInAsP-InP multiquantum-well laser; bimetallic heatsink; differential thermal expansion; external uniaxial stress; gain calculation; lattice-mismatched epitaxy; modal wavelength; operating properties; passive temperature compensation; rising temperature effects; strain; thermal stress; threshold current equivalent characteristic temperature; uncooled GaInAsP-InP diode lasers; Capacitive sensors; Diode lasers; Laser modes; Laser stability; Quantum well devices; Semiconductor process modeling; Temperature distribution; Thermal expansion; Threshold current; Uniaxial strain;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.605717

Filename

605717