Title :
The prospects and challenges in junction process technology for advanced semiconductor devices
Author_Institution :
Adv. Discrete Dev. Center, Toshiba Corp. Semicond. & Storage Products Co., Nomi, Japan
fDate :
June 26 2014-July 4 2014
Abstract :
Historical background of ion implantation technology in semiconductor devices is reviewed in conjunction with electrical activation of impurity atoms, annealing of primary defects introduced during ion implantation as well as the diffusion of impurity atoms. Next the prospects and challenges in junction process technology for advanced semiconductor devices are discussed.
Keywords :
annealing; impurities; ion implantation; semiconductor devices; semiconductor junctions; advanced semiconductor devices; electrical activation; impurity atom diffusion; ion implantation technology; junction process technology; primary defect annealing; Annealing; Crystals; Doping; Impurities; Ion implantation; Plasma temperature; Silicon; annealing; defects; diffusion; electrical activation; ion implantation; material modification;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6939767
