DocumentCode :
1358334
Title :
Long-Endurance Nanocrystal 
Resistive Memory Using a TaON Buffer Layer
Author :
Cheng, C.H. ; Chen, P.C. ; Wu, Y.H. ; Yeh, F.S. ; Chin, Albert
Author_Institution :
Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
32
Issue :
12
fYear :
2011
Firstpage :
1749
Lastpage :
1751
Abstract :
Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
Keywords :
germanium compounds; nickel; random-access storage; tantalum compounds; titanium compounds; Ni-GeO-TiO2-TaON-TaN; RRAM; flash memory; forming-free resistive switching; long-endurance nanocrystal resistive memory; nanocrystal buffer layer; resistive random access memory; self-compliance set-reset currents; Current measurement; Electrodes; Flash memory; Nickel; Resistance; Switches; Very large scale integration; $hbox{TiO}_{2}$ ; $hbox{GeO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2168939
Filename :
6058577
Link To Document :
