Title :
A study of vacancy-related defects in (Pb,La)(Zr,Ti)O/sub 3/ thin films using positron annihilation
Author :
Friessnegg, Thomas ; Aggarwal, Sanjeev ; Nielsen, Brent ; Ramesh, Ramamoorthy ; Keeble, David J. ; Poindexter, Edward H.
Author_Institution :
Maryland Univ., College Park, MD, USA
fDate :
7/1/2000 12:00:00 AM
Abstract :
The formation of vacancy-type defects in La-doped lead zirconate titanate (PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum doping and after cooling in an oxygen-reduced ambient. The changes in the Doppler-broadening S parameter are consistent with the progressive introduction of Pb-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10/sup -5/ Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy-type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes.
Keywords :
Doppler broadening; ferroelectric thin films; lanthanum compounds; lead compounds; piezoelectric thin films; positron annihilation; vacancies (crystal); (Pb,La)(Zr,Ti)O/sub 3/ thin films; Doppler-broadening S parameter; La-doping; PLZT; Pb-vacancies; PbLaZrO3TiO3; cation-oxygen vacancy complexes; cooling; lanthanum doping; oxygen-reduced ambient; positron annihilation; vacancy-related defects; Capacitors; Cooling; Doping; Ferroelectric materials; Laboratories; Lanthanum; Lead; Positrons; Spectroscopy; Transistors;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
