DocumentCode
1358468
Title
Correction to “205-GHz (Al,In)N/GaN HEMTs” [Sep 10 957-959]
Volume
31
Issue
11
fYear
2010
Firstpage
1320
Lastpage
1320
Abstract
In the above titled paper (ibid., vol. 31, no. 9, pp. 957-959, Sep. 10), the name of one of the authors was incorrectly typeset. The second-to-last author´s name is Nicholas Grandjean.
Keywords
Aluminum compounds; Gallium compounds; HEMTs; Indium compounds; Millimeter wave transistors; Wide band gap semiconductors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2087710
Filename
5607228
Link To Document