DocumentCode :
1358619
Title :
An Analytical 
– 
Model for Surrounding-Gate Transistors That Includes Quantum and Velo
Author :
Roldán, J.B. ; Gamiz, Francisco ; Jiménez-Molinos, F. ; Sampedro, Carlos ; Godoy, Andrés ; Ruiz, Francisco J García ; Rodriguez, Noel
Author_Institution :
Dept. de Electron. y Tecnol. de Comput., Univ. de Granada, Granada, Spain
Volume :
57
Issue :
11
fYear :
2010
Firstpage :
2925
Lastpage :
2933
Abstract :
A new analytical model is presented for the inversion charge of surrounding-gate transistors (SGTs). Quantum effects are taken into account by means of a modified capacitance model that includes the inversion charge centroid and a correction to the threshold voltage. A drain current model for the SGT that includes velocity saturation, short channel, and velocity overshoot effects is also developed. The model accurately reproduces both simulated and experimental results for different silicon core radii and gate voltages.
Keywords :
nanowires; semiconductor device models; analytical I-V model; capacitance model; drain current model; quantum effects; surrounding-gate transistors; velocity overshoot effects; Mathematical model; Quantum capacitance; Semiconductor device modeling; Silicon on insulator technology; Threshold voltage; Nanowires; quantum effects; semiconductor device modeling; silicon-on-insulator (SOI); surrounding gate transistor (SGT);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2067217
Filename :
5607251
Link To Document :
