Title :
A 405-nW CMOS Temperature Sensor Based on Linear MOS Operation
Author :
Law, Man Kay ; Bermak, A.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
This brief presents a CMOS temperature sensor suitable for ultralow-power applications. With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm2, is fabricated using the TSMC 0.18-¿m one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of -0.8°C to +1°C from 0°C to 100°C after calibration is achieved.
Keywords :
CMOS integrated circuits; MOSFET; temperature sensors; CMOS temperature sensor; MOS transistor; differential sensing architecture; linear MOS operation; one-polysilicon six-metal process; power 405 nW; size 0.18 mum; temperature -0.8 degC to 1 degC; temperature 0 degC to 100 degC; temperature 293 K to 298 K; ultralow-power applications; voltage 1 V; Delay lines; Inverters; Linearity; MOSFETs; Rapid thermal processing; Temperature control; Temperature sensors; Thermal management; Voltage; Wireless sensor networks; CMOS temperature sensor; ultralow-power applications;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2009.2034201
