An improved SPICE model for high-frequency noise of BJTs and HBTs

Author

Zillmann, Uwe ; Herzel, Frank

Author_Institution

Inst. of Semicond. Phys., Frankfurt, Germany

Volume

31

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1344

Lastpage

1346

Abstract

An improved compact model for the high-frequency noise of bipolar junction transistors (BJTs) and heterojunction bipolar transistors (HBTs) is presented and implemented in SPICE3. It properly takes into account the frequency function of thermal noise in the input circuit, which is related to the real part of the input admittance. This quantity is the result of an interplay between the base resistance, the internal emitter-base capacitance, the small-signal input conductance of the intrinsic transistor, and the emitter series resistance. This requires the replacement of the noisy base resistance in SPICE by a frequency-dependent expression consisting of the appropriate SPICE parameters. A similar substitution is needed in the output circuit. For a Si/SiGe HBT these improvements lead to excellent agreement between the noise figure and device simulation results

Keywords

SPICE; bipolar transistors; capacitance; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; thermal noise; BJTs; HBTs; HF noise; SPICE model; SPICE3; Si-SiGe; base resistance; bipolar junction transistors; compact model; emitter series resistance; frequency function; heterojunction bipolar transistors; high-frequency noise; input admittance; internal emitter-base capacitance; noise figure; small-signal input conductance; thermal noise; Admittance; Capacitance; Circuit noise; Circuit simulation; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; SPICE; Silicon germanium;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.535422

Filename

535422