DocumentCode
1359061
Title
0.13 
m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
Author
Avenier, Grégory ; Diop, Malick ; Chevalier, Pascal ; Troillard, Germaine ; Loubet, Nicolas ; Bouvier, Julien ; Depoyan, Linda ; Derrier, Nicolas ; Buczko, Michel ; Leyris, Cédric ; Boret, Samuel ; Montusclat, Sébastien ; Margain, Alain ; Pruvost, Sébasti
Author_Institution
STMicroelectronics, Crolles, France
Volume
44
Issue
9
fYear
2009
Firstpage
2312
Lastpage
2321
Abstract
This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/μm2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details are given on HBT integration, reliability and models as well as on back-end devices models.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; MIM devices; MIMIC; MOS capacitors; heterojunction bipolar transistors; semiconductor device models; semiconductor device reliability; BiCMOS technology; HBT; SiGe; complementary double gate oxide MOS transistor; device reliability; high performance transmission line; high-linearity MIM capacitor; millimetre-wave applications; size 0.13 mum; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; MIM capacitors; Medium voltage; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; Transmission lines; BiCMOS integrated circuits technology; Silicon Germanium (SiGe); heterojunction bipolar transistor (HBT); integrated circuit fabrication; millimeter wave technology;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2009.2024102
Filename
5226691
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