Title :
Wafer Bonded Subwavelength Metallo-Dielectric Laser
Author :
Bondarenko, O. ; Simic, A. ; Gu, Q. ; Lee, J.H. ; Slutsky, B. ; Nezhad, M.P. ; Fainman, Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
Light sources that are compatible with the silicon photonics platform are the key elements needed for photonic integrated circuits on silicon. Here, we report optically pumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.
Keywords :
elemental semiconductors; integrated optics; optical pumping; semiconductor lasers; silicon; wafer bonding; Si; light sources; optically pumped lasers; photonic integrated circuits; silicon photonics; temperature 293 K to 298 K; temperature 77 K; wafer bonded subwavelength metallodielectric laser; Nanostructures; Semiconductor lasers; Semiconductor lasers; engineered photonic nanostructures; fabrication and characterization; nanocavities; nanostructures; subwavelength structures;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2011.2146763
