Title :
Application of Wafer Direct Bonding Technique to Optical Nonreciprocal Devices
Author :
Mizumoto, Tetsuya ; Takei, Ryohei
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fDate :
6/1/2011 12:00:00 AM
Abstract :
A wafer direct bonding technique enables one to integrate dissimilar crystals like a magnetooptic garnet on Si and III-V semiconductors, which facilitates fabrication of optical nonreciprocal devices on commonly used waveguide platforms. The surface-activated direct bonding technique is described, focusing on the change of surface roughness due to the surface activation process with oxygen or argon plasma irradiation. The interferometric waveguide optical isolator that uses magnetooptic nonreciprocal phase shift is fabricated by directly bonding a magnetooptic garnet onto a silicon rib waveguide. An isolation of 21 dB is obtained at a wavelength of 1.56 μm. The interferometric optical isolator can be modified to a waveguide optical circulator. The calculated performance of the waveguide optical circulator is also shown in this paper.
Keywords :
gadolinium compounds; gallium compounds; garnets; integrated optics; light interferometers; magneto-optical devices; optical circulators; optical fabrication; optical isolators; plasma materials processing; rib waveguides; silicon-on-insulator; surface roughness; wafer bonding; (YCe)3Fe5O12-(GdCa)3(GaMgZr)5O12; (YCe)3Fe5O12-Si; interferometric optical isolator; interferometric waveguide; magnetooptic garnet; magnetooptic nonreciprocal phase shift; optical nonreciprocal device; plasma irradiation; silicon rib waveguide; surface activated direct bonding technique; surface activation process; surface roughness; wafer direct bonding technique; waveguide optical circulator; waveguide platform; wavelength 1.56 mum; Bonding; Integrated circuit synthesis; Magnetooptic devices; Photonic integrated circuit; direct bonding; magnetooptic garnet; optical circulator; optical isolator;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2011.2131641