Title :
7.8 GHz small-signal modulation bandwidth of 1.3 μm DQW GaInAsN/GaAs laser diodes
Author :
Reinhardt, Marc ; Fischer, M. ; Kamp, M. ; Forchel, A.
Author_Institution :
Inst. for Tech. Phys., Wurzburg Univ., Germany
fDate :
6/8/2000 12:00:00 AM
Abstract :
High frequency characterisation of double quantum well GaInAsN laser diodes emitting at 1.28 μm is reported. The 3 dB bandwidth of ridge waveguide lasers was measured to be 7.8 GHz at 120 mA under CW operation demonstrating the potential for high speed operation of these devices
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser beams; laser variables measurement; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; 1.28 mum; 1.3 mum; 120 mA; 298 K; 7.8 GHz; CW operation; DQW laser diodes; GaInAsN-GaAs; GaInAsN/GaAs; double quantum well laser diodes; high frequency characterisation; high speed operation; ridge waveguide lasers; small-signal modulation bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000793
