• DocumentCode
    1359174
  • Title

    Strained 1.3 μm MQW AlGaInAs lasers grown by digital alloy MBE

  • Author

    SpringThorpe, A.J. ; Garanzotis, T. ; Paddon, P. ; Pakulski, G. ; White, K.I.

  • Author_Institution
    Nortel Networks, Ottawa, Ont., Canada
  • Volume
    36
  • Issue
    12
  • fYear
    2000
  • fDate
    6/8/2000 12:00:00 AM
  • Firstpage
    1031
  • Lastpage
    1032
  • Abstract
    AlGaInAs strained MQW lasers, emitting at 1.3 μm, have been prepared for the first time using a digital alloy approach. 2 μm stripe geometry lasers have characteristics comparable to those of lasers prepared using bulk alloy layers. The infinite length threshold current densities are as low as 140 kA/cm2/quantum well and T 0 values (20-40°C) range from 75-90 K for chip lengths of 375-2375 μm
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; 1.3 mum; 2 mum; 20 to 40 C; 375 to 2375 mum; 75 to 90 K; AlGaInAs; AlGaInAs lasers; bulk alloy layers; chip lengths; digital alloy MBE; digital alloy approach; infinite length threshold current densities; quantum well; strained MQW lasers; strained lasers; stripe geometry lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000789
  • Filename
    852182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1359174