Title :
Strained 1.3 μm MQW AlGaInAs lasers grown by digital alloy MBE
Author :
SpringThorpe, A.J. ; Garanzotis, T. ; Paddon, P. ; Pakulski, G. ; White, K.I.
Author_Institution :
Nortel Networks, Ottawa, Ont., Canada
fDate :
6/8/2000 12:00:00 AM
Abstract :
AlGaInAs strained MQW lasers, emitting at 1.3 μm, have been prepared for the first time using a digital alloy approach. 2 μm stripe geometry lasers have characteristics comparable to those of lasers prepared using bulk alloy layers. The infinite length threshold current densities are as low as 140 kA/cm2/quantum well and T 0 values (20-40°C) range from 75-90 K for chip lengths of 375-2375 μm
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; 1.3 mum; 2 mum; 20 to 40 C; 375 to 2375 mum; 75 to 90 K; AlGaInAs; AlGaInAs lasers; bulk alloy layers; chip lengths; digital alloy MBE; digital alloy approach; infinite length threshold current densities; quantum well; strained MQW lasers; strained lasers; stripe geometry lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000789
