Title :
High sensitivity broadband quantum well infrared photodetector with double/linear-graded barrier for 8-12 μm detection
Author :
Lee, Jung-Hee ; Li, Sheng S. ; Tidrow, M.Z. ; Liu, W.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
6/8/2000 12:00:00 AM
Abstract :
The design, fabrication and characterisation of a high performance double barrier (DB) AlGaAs/InGaAs/AlGaAs linear-graded barrier (LGB) quantum well infrared photodetector (QWIP) is reported for 8-10 μm detection. Broadband detection under positive bias and normal spectral response under negative bias conditions were observed in this device due to the use of the AlxGa1-xAs LGB-(x=0.018-0.09) and a thin Al0.15Ga0.85As DB structure
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; optical design techniques; optical fabrication; optical testing; photodetectors; quantum well devices; semiconductor devices; sensitivity; 8 to 10 mum; 8 to 12 mum; Al0.15Ga0.85As; AlGaAs-InGaAs-AlGaAs; AlGaAs/InGaAs/AlGaAs linear-graded barrier quantum well; broadband detection; characterisation; design; double barrier structure; double/linear-graded barrier; fabrication; high performance double barrier linear-graded barrier quantum well infrared photodetector; high sensitivity broadband quantum well infrared photodetector; infrared photodetector; linear-graded barrier; negative bias conditions; normal spectral response; positive bias; quantum well infrared photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000779
