Title :
Solid-state circuits: Gallium arsenide spawns speed: Monolithic digital circuits employing `MESFET¿ devices promise multigigabit and higher data rates
Author :
Tuyl, R.V. ; Liechti, C.
Author_Institution :
Hewlett-Packard, Palo Alto, CA, USA
fDate :
3/1/1977 12:00:00 AM
Abstract :
Monolithic digital circuits employing `MESFET´ devices promise multigigabit and higher data rates. The basic operation of MESFET is described.
Keywords :
Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; GaAs MESFET; monolithic digital IC; subnanosecond logic; Capacitance; Gallium arsenide; Logic gates; MESFETs; Silicon; Switches; Switching circuits;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.1977.6369350
