Title :
Closed-form approximation for the perturbation of MOSFET surface potential by quantum-mechanical effects
Author :
Gildenblat, G. ; Chen, T.L. ; Bendix, P.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fDate :
6/8/2000 12:00:00 AM
Abstract :
A computationally efficient analytical approximation of quantum-mechanical effects within the context of a surface-potential-based compact MOSFET model is presented. The results are verified by comparison with numerical calculations and experimental data for deep submicron devices
Keywords :
MOSFET; approximation theory; quantum interference phenomena; semiconductor device models; surface potential; MOSFET surface potential; closed-form approximation; compact MOSFET model; computationally efficient analytical approximation; deep submicron devices; numerical calculations; quantum-mechanical effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000778
