DocumentCode
1359360
Title
Closed-form approximation for the perturbation of MOSFET surface potential by quantum-mechanical effects
Author
Gildenblat, G. ; Chen, T.L. ; Bendix, P.
Author_Institution
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Volume
36
Issue
12
fYear
2000
fDate
6/8/2000 12:00:00 AM
Firstpage
1072
Lastpage
1073
Abstract
A computationally efficient analytical approximation of quantum-mechanical effects within the context of a surface-potential-based compact MOSFET model is presented. The results are verified by comparison with numerical calculations and experimental data for deep submicron devices
Keywords
MOSFET; approximation theory; quantum interference phenomena; semiconductor device models; surface potential; MOSFET surface potential; closed-form approximation; compact MOSFET model; computationally efficient analytical approximation; deep submicron devices; numerical calculations; quantum-mechanical effects;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000778
Filename
852209
Link To Document