DocumentCode
1359376
Title
Pseudorandom pulsed I/V characterisation of MESFET/HEMT devices
Author
Rodriguez-Tellez, J. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A.
Author_Institution
Dept. of Electr. & Electron. Eng., Bradford Univ., UK
Volume
36
Issue
12
fYear
2000
fDate
6/8/2000 12:00:00 AM
Firstpage
1075
Lastpage
1076
Abstract
A new automated system for observing the dependence of the frequency dispersion effect on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a pseudorandom pulse I/V measurement system for observing the memory effect in these devices
Keywords
III-V semiconductors; Schottky gate field effect transistors; electric current measurement; gallium arsenide; high electron mobility transistors; pulse measurement; semiconductor device measurement; GaAs; GaAs MESFET/HEMT devices; automated system; drain current; electric field dependence; frequency dispersion effect; memory effect; pseudorandom pulse I/V measurement system; pseudorandom pulsed I/V characterisation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000783
Filename
852211
Link To Document