• DocumentCode
    1359506
  • Title

    Strain Effect of the Dielectric Constant in Silicon Dioxide

  • Author

    Huang, Jian-Qiu ; Huang, Qing-An ; Qin, Ming ; Dong, Weijie ; Chen, Xiaowei

  • Author_Institution
    Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
  • Volume
    19
  • Issue
    6
  • fYear
    2010
  • Firstpage
    1521
  • Lastpage
    1523
  • Abstract
    The effect of mechanical stress on the dielectric constant of is experimentally studied. A beam-bending method is used to extract the strain effect coefficient M12. According to the measurements, the dielectric constant changes linearly with the stress. The value of is shown to be -(0.19 ± 0.01) × 10-21 m2/V2. The mechanism underlying the phenomena is discussed.
  • Keywords
    permittivity; silicon compounds; stress effects; SiO2; beam-bending method; dielectric constant; mechanical stress effect; strain effect coefficient; Dielectric constant; Micromachining; Silicon compounds; Stress; Dielectric constant; mechanical stress; micromachining; silicon dioxide; test structure;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2010.2082500
  • Filename
    5608482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1359506