Title :
Strain Effect of the Dielectric Constant in Silicon Dioxide
Author :
Huang, Jian-Qiu ; Huang, Qing-An ; Qin, Ming ; Dong, Weijie ; Chen, Xiaowei
Author_Institution :
Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
Abstract :
The effect of mechanical stress on the dielectric constant of is experimentally studied. A beam-bending method is used to extract the strain effect coefficient M12. According to the measurements, the dielectric constant changes linearly with the stress. The value of is shown to be -(0.19 ± 0.01) × 10-21 m2/V2. The mechanism underlying the phenomena is discussed.
Keywords :
permittivity; silicon compounds; stress effects; SiO2; beam-bending method; dielectric constant; mechanical stress effect; strain effect coefficient; Dielectric constant; Micromachining; Silicon compounds; Stress; Dielectric constant; mechanical stress; micromachining; silicon dioxide; test structure;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2010.2082500
