Title :
SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz
Author :
Muller, Alexandru ; Neculoiu, Dan ; Konstantinidis, George ; Deligeorgis, George ; Dinescu, Adrian ; Stavrinidis, Antonis ; Cismaru, Alina ; Dragoman, Mircea ; Stefanescu, Alexandra
Author_Institution :
IMT, Bucharest, Romania
Abstract :
This letter describes the manufacture and characterization of surface acoustic wave (SAW) devices on GaN/Si devoted to applications above the 5-GHz frequency range. The SAW structures consist of two face-to-face interdigitated transducers (IDTs), placed at different distances. Using a TiAu metallization, 80-nm-thick and advanced e-beam lithographical techniques with IDTs with fingers and spacings 200 nm wide have been obtained on the GaN layer. On wafer measurement of the S parameters have demonstrated the operation at approximately 5.6 GHz. The frequency response of the devices is explained in detail.
Keywords :
III-V semiconductors; S-parameters; electron beam lithography; elemental semiconductors; frequency response; gallium compounds; interdigital transducers; metallisation; silicon; surface acoustic wave devices; wide band gap semiconductors; GaN-Si; S parameters; SAW devices; e-beam lithographical techniques; face-to-face interdigitated transducers; frequency response; metallization; surface acoustic wave; wafer measurement; Gallium nitride; Microwave measurements; Nanolithography; Resonant frequency; Surface acoustic wave devices; Surface acoustic waves; E-beam nanolithography; interdigitated transducers (IDTs); surface acoustic wave (SAW);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2078484
