Title :
High-Performance Silicon Nanowire Gate-All-Around nMOSFETs Fabricated on Bulk Substrate Using CMOS-Compatible Process
Author :
Song, Yi ; Zhou, Huajie ; Xu, Qiuxia ; Niu, Jiebin ; Yan, Jiang ; Zhao, Chao ; Zhong, Huicai
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
In this letter, a novel self-aligned CMOS-compatible method for the fabrication of gate-all-around silicon nanowire MOSFETs (GAA SNWFETs) on bulk substrate has been proposed. The fabricated SNWFET featuring 33-nm gate length and 7-nm diameter shows the highest driving current (Ion = 2500 μA/μm at Vds = Vgs = 1.0 V) among previously reported data and achieves high Ion/Ioff ratio of 105, lightening the promise for high performance and strong scalability of GAA SNWFETs. The process details and optimization procedure are extensively discussed.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; nanowires; silicon; CMOS-compatible process; Si; bulk substrate; high-performance silicon nanowire gate-all-around nMOSFET; stress-limited oxidation; CMOS integrated circuits; Logic gates; MOSFETs; Nanostructured materials; Oxidation; Substrates; Bulk gate-all-around silicon nanowire MOSFETs (GAA SNWFETs); parasitic effects; stress-limited oxidation; volume inversion;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2080256
