Title :
Filtered cathodic vacuum arc deposition of copper thin film
Author :
Shi, J.R. ; Lau, S.P. ; Sun, Z. ; Shi, X. ; Tay, B.K. ; Tan, H.S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
7/6/2000 12:00:00 AM
Abstract :
Copper thin films with low electrical resistivity were successfully deposited using a filtered cathodic vacuum arc technique at room temperature. It was found that there is a critical film thickness of ~135 nm, above which the resistivity has an almost unchanged value of 1.8 μΩcm. Below the critical thickness, the resistivity increases with decreasing thickness and is correlated with the copper grain size measured by AFM and X-ray diffraction
Keywords :
ULSI; X-ray diffraction; atomic force microscopy; copper; grain size; integrated circuit interconnections; vacuum deposition; 1.8 muohmcm; 135 nm; AFM; Cu; IC interconnections; ULSI; X-ray diffraction; critical film thickness; electrical resistivity; filtered cathodic vacuum arc deposition; grain size;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000861
