DocumentCode :
1359622
Title :
Towards Process Variation-Aware Power Gating
Author :
Yeh, Chingwei ; Chen, Yuan-Chang ; Wang, Jinn-Shyan
Author_Institution :
Electr. Eng. Dept., Nat. Chung-Cheng Univ., Taichung, Taiwan
Volume :
20
Issue :
11
fYear :
2012
Firstpage :
1929
Lastpage :
1937
Abstract :
This paper presents a power gating design that considers process variation for proper wakeup control. First, the surge current constraint is examined and refined for a simpler and more realistic view of inter-module reliability. Following that, several circuits are proposed on top of a delay chain to adapt the timing control of power switches to process variations. Experimental results show that the proposed design is able to track process variation such that the surge current and the wakeup time are both kept to expectation in all process corners.
Keywords :
power MOSFET; semiconductor device reliability; switches; inter-module reliability; power gating design; power switches; process variation-aware power gating; surge current constraint; timing control; wakeup control; Control systems; Delay; Detectors; Process control; Reliability; Surges; Power gating; power management; process corner; surge current; wakeup;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2011.2169435
Filename :
6059463
Link To Document :
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