• DocumentCode
    1359622
  • Title

    Towards Process Variation-Aware Power Gating

  • Author

    Yeh, Chingwei ; Chen, Yuan-Chang ; Wang, Jinn-Shyan

  • Author_Institution
    Electr. Eng. Dept., Nat. Chung-Cheng Univ., Taichung, Taiwan
  • Volume
    20
  • Issue
    11
  • fYear
    2012
  • Firstpage
    1929
  • Lastpage
    1937
  • Abstract
    This paper presents a power gating design that considers process variation for proper wakeup control. First, the surge current constraint is examined and refined for a simpler and more realistic view of inter-module reliability. Following that, several circuits are proposed on top of a delay chain to adapt the timing control of power switches to process variations. Experimental results show that the proposed design is able to track process variation such that the surge current and the wakeup time are both kept to expectation in all process corners.
  • Keywords
    power MOSFET; semiconductor device reliability; switches; inter-module reliability; power gating design; power switches; process variation-aware power gating; surge current constraint; timing control; wakeup control; Control systems; Delay; Detectors; Process control; Reliability; Surges; Power gating; power management; process corner; surge current; wakeup;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2011.2169435
  • Filename
    6059463