Title :
40 Gbit/s monolithic digital OEIC composed of unitravelling-carrier photodiode and InP HEMTs
Author :
Shimizu, N. ; Murata, K. ; Hirano, A. ; Miyamoto, Y. ; Kitabayashi, H. ; Umeda, Y. ; Akeyoshi, T. ; Furuta, T. ; Watanabe, N.
Author_Institution :
NTT Network Innovation Labs., Kanagawa, Japan
fDate :
7/6/2000 12:00:00 AM
Abstract :
An optoelectronic integrated circuit (OEIC) receiver with a measured sensitivity of -27.5 dBm for a 40 Gbit/s return-to-zero optical signal is described. The results indicate the potential of current in high-speed optical communication systems
Keywords :
HEMT integrated circuits; III-V semiconductors; indium compounds; integrated optoelectronics; optical receivers; photodiodes; 40 Gbit/s; Gbit/s monolithic digital OEIC; Gbit/s return-to-zero optical signal; InP HEMTs; OEIC receiver; high-speed optical communication systems; measured sensitivity; optoelectronic integrated circuit receiver; unitravelling-carrier photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000859
