DocumentCode :
1359712
Title :
New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High- 
/Metal-Gate nMOSFETs
Author :
Sagong, Hyun Chul ; Kang, Chang Yong ; Sohn, Chang-Woo ; Choi, Do-Young ; Jeong, Eui-Young ; Baek, Chang-Ki ; Lee, Jeong-Soo ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Volume :
32
Issue :
12
fYear :
2011
Firstpage :
1668
Lastpage :
1670
Abstract :
The hot-carrier (HC) effect in high-k/metal-gate nMOSFETs is characterized using radio-frequency (RF) small-signal parameter analysis. To explain a novel HC degradation of RF small-signal parameters, we propose a modified surface channel resistance model that can be applied to not only conventional SiO2/poly-Si-gate nMOSFETs but also high-k/metal-gate nMOSFETs.
Keywords :
MOSFET; high-k dielectric thin films; hot carriers; radiofrequency measurement; surface resistance; HC degradation; HC effect; RF small-signal parameters; conventional nMOSFET; high k-nMOSFET; hot-carrier degradation; hot-carrier effect; metal-gate nMOSFET; modified surface channel resistance model; radio-frequency small-signal parameter analysis; Capacitance; Degradation; High K dielectric materials; Logic gates; MOSFETs; Radio frequency; Resistance; High-$k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2169039
Filename :
6059475
Link To Document :
