Title :
Additional resistance method for extraction of separated nonlinear parasitic resistances and effective mobility in MOSFETs
Author :
Lim, G.M. ; Kim, Y.C. ; Kim, D.J. ; Park, Y.W. ; Kim, D.M.
Author_Institution :
Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea
fDate :
7/6/2000 12:00:00 AM
Abstract :
An additional resistance method (ARM) is proposed for the accurate and convenient extraction of separated source (RS) and drain (RD) resistances, which also includes gate voltage (VGS ) dependence, in MOSFETs. The ARM uses an analytical current-voltage relation in the linear operation of MOSFETs with two external resistors. In addition to VGS-dependent RS and RD, the channel carrier mobility is obtained by considering parasitic resistances in MOSFETs. The ARM is verified using experimental data obtained from n- and p-MOSFETs with W/L=30 μm/0.7 μm
Keywords :
MOSFET; carrier mobility; electrical resistivity; semiconductor device measurement; semiconductor device models; 0.7 mum; 30 mum; MOSFETs; additional resistance method; analytical current-voltage relation; channel carrier mobility; drain resistance; effective mobility; external resistors; gate voltage; n-MOSFETs; p-MOSFETs; separated nonlinear parasitic resistance; source resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000810
