• DocumentCode
    1359715
  • Title

    Additional resistance method for extraction of separated nonlinear parasitic resistances and effective mobility in MOSFETs

  • Author

    Lim, G.M. ; Kim, Y.C. ; Kim, D.J. ; Park, Y.W. ; Kim, D.M.

  • Author_Institution
    Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea
  • Volume
    36
  • Issue
    14
  • fYear
    2000
  • fDate
    7/6/2000 12:00:00 AM
  • Firstpage
    1233
  • Lastpage
    1234
  • Abstract
    An additional resistance method (ARM) is proposed for the accurate and convenient extraction of separated source (RS) and drain (RD) resistances, which also includes gate voltage (VGS ) dependence, in MOSFETs. The ARM uses an analytical current-voltage relation in the linear operation of MOSFETs with two external resistors. In addition to VGS-dependent RS and RD, the channel carrier mobility is obtained by considering parasitic resistances in MOSFETs. The ARM is verified using experimental data obtained from n- and p-MOSFETs with W/L=30 μm/0.7 μm
  • Keywords
    MOSFET; carrier mobility; electrical resistivity; semiconductor device measurement; semiconductor device models; 0.7 mum; 30 mum; MOSFETs; additional resistance method; analytical current-voltage relation; channel carrier mobility; drain resistance; effective mobility; external resistors; gate voltage; n-MOSFETs; p-MOSFETs; separated nonlinear parasitic resistance; source resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000810
  • Filename
    852261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1359715