Title :
Graded-emitter AlGaN/GaN heterojunction bipolar transistors
Author :
Huang, J.J. ; Hattendorf, M. ; Feng, M. ; Lambert, D.J.H. ; Shelton, B.S. ; Wong, M.M. ; Chowdhury, U. ; Zhu, T.G. ; Kwon, H.K. ; Dupuis, R.D.
Author_Institution :
Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA
fDate :
7/6/2000 12:00:00 AM
Abstract :
AlGaN/GaN heterojunction bipolar transistors (HBTs) with a graded emitter-base junction have been grown and fabricated. The epitaxial structures were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. The HBT devices with an emitter size of 60×60 μm2 exhibit well controlled current-voltage characteristics and Gummel plots and achieve a common-emitter current gain in the range β=4-10 and a common-emitter offset voltage VCEoff=4 V at room temperature
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; heterojunction bipolar transistors; semiconductor device measurement; semiconductor growth; wide band gap semiconductors; 20 C; 4 V; 60 mum; Al2O3; AlGaN-GaN; AlGaN/GaN heterojunction bipolar transistors; Gummel plots; HBT; common-emitter current gain; common-emitter offset voltage; current-voltage characteristics; emitter size; epitaxial structures; graded emitter-base junction; graded-emitter AlGaN/GaN heterojunction bipolar transistors; metalorganic chemical vapor deposition; room temperature; sapphire substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000887
