DocumentCode
1359749
Title
Applications literature: Making measurements with piezoreslstive strain gages
Volume
15
Issue
2
fYear
1978
Firstpage
83
Lastpage
83
Abstract
This 20-page bulletin gives a detailed description of piezoresistance in semiconductors, strain-gage characteristics, and typical strain-gage measurement circuits. Definitions of piezoresistivity, gage factor, and doping start the presentation, followed by a discussion of gage characteristics. The circuitry section details bridge circuits, dynamic strain measurements, static strain measurements, gage factor compensation and maximum excitation voltage. Strain-gage installation is also detailed regarding surface preparation, cements, bonding bare gages, and bonding encapsulated gages
Keywords
Ceramics; Microwave measurements; Power measurement; Reliability theory; Semiconductor device measurement; Strain measurement; Testing;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1978.6369425
Filename
6369425
Link To Document