Title :
Radial confinement: concept for lateral power devices
Author :
Krishnan, S. ; Souza, M. M Dc ; Narayanan, E.M.S. ; Vellvehi, Miquel ; Flores, D. ; Rebollo, J. ; Millan, J.
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
fDate :
7/6/2000 12:00:00 AM
Abstract :
A novel, radial confinement approach is proposed for lateral power devices on silicon on sapphire technology. The key feature is the decrease in the drift region width from the anode to cathode to achieve charge confinement to achieve higher n-drift concentration than in a conventional device
Keywords :
elemental semiconductors; p-i-n diodes; power semiconductor diodes; semiconductor device models; silicon; silicon-on-insulator; SOS; Si-Al2O3; anode; cathode; charge confinement; drift region width; lateral power devices; n-drift concentration; pin diodes; radial confinement; silicon on sapphire technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000894
