Light Emission Enhancement From Er-Doped Silicon Photonic Crystal Double-Heterostructure Microcavity

Author

Wang, Yue ; Zhang, Jiashun ; Wu, Yuanda ; An, Junming ; Li, Jianguang ; Wang, Hongjie ; Hu, Xiongwei

Author_Institution

State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China

Volume

24

Issue

2

fYear

2012

Firstpage

110

Lastpage

112

Abstract

We experimentally demonstrate efficient light emission enhancement from Si with Er/O co-implanting coupled to 2-D hexagonal photonic crystal (PC) double-heterostructure microcavity fabricated on silicon-on-insulator. A single sharp resonant peak with 1552.2 nm communication wavelength dominates the photoluminescence (PL) spectrum and 35-fold PL intensity enhancement is obtained compared to the case of identically implanted silicon-on-insulator wafer at room temperature. The obvious red-shift and degraded Q-factor of resonant peak are present with the excitation power increasing, and the maximum measured Q-factor of 3829 is found at 1.5 mW power. The resonant peak is observed to shift depending on the structural parameters of PC.

Keywords

Q-factor; cavity resonators; erbium; integrated optics; microcavities; photoluminescence; photonic crystals; red shift; silicon; silicon-on-insulator; 2D hexagonal photonic crystal; PL intensity enhancement; Q-factor; Si:Er; cavity resonators; excitation power; light emission enhancement; photoluminescence spectrum; photonic crystal double-heterostructure microcavity; power 1.5 mW; red-shift; silicon-on-insulator; temperature 293 K to 298 K; wavelength 1552.2 nm; Erbium; Ions; Luminescence; Microcavities; Photonic crystals; Q factor; Silicon; Cavity resonators; erbium; luminescence; photonic crystals (PCs); silicon;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2173183

Filename

6059483