Title :
An optimized 25.5-76.5 GHz PHEMT-based coplanar frequency tripler
Author :
Campos-Roca, Y. ; Verweyen, L. ; Fernandez-Barciela, M. ; Sanchez, E. ; Curras-Francos, M.C. ; Bronner, W. ; Hulsmann, A. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
6/1/2000 12:00:00 AM
Abstract :
This letter presents an optimized single-stage MMIC tripler with W-band output frequency (76.5 GHz). The circuit is based on an 0.15 μm gate-length AlGaAs/InGaAs/GaAs PHEMT. By using a class AB transistor bias point and carefully selecting its input and output terminations, a high conversion gain of -4.3 dB for an 8.5 dBm input signal and a saturated output power of 7 dBm have been obtained. To our knowledge, these results represent the best performance reported up to date for an active frequency tripler with W-band output frequency.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; aluminium compounds; field effect MIMIC; frequency multipliers; gallium arsenide; indium compounds; millimetre wave frequency convertors; -4.3 dB; 0.15 micron; 25.5 to 76.5 GHz; AlGaAs-InGaAs-GaAs; PHEMT-based coplanar frequency tripler; W-band; active frequency tripler; class AB transistor bias point; conversion gain; input terminations; output terminations; saturated output power; single-stage MMIC tripler; Frequency; Gallium arsenide; Indium gallium arsenide; MESFETs; MMICs; MODFET integrated circuits; Oscillators; Physics; Solid state circuits; Varactors;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
