Solid stats III. Discrete devices: Advances in extending performance of power MOS field-effect transistors promise to extend their usefulness¿
Author :
Fogenbaum, J.
Volume :
18
Issue :
1
fYear :
1981
Firstpage :
64
Lastpage :
65
Abstract :
For pt.II see ibid., vol.18, no.1, p.62-3 (1981). Discusses advances in extending the performance of power MOS field effect transistors which will extend their usefulness, particularly in relation to integration with transducers.
Keywords :
insulated gate field effect transistors; power transistors; MOSFET; power MOS field effect transistors; Conductors; MOSFETs; Resistance; Sensors; Substrates; Switches; Transducers;
