DocumentCode
1360499
Title
Demonstration of a 1024 
1024 Pixel InAs–GaSb Superlattice Focal Plane Array
Author
Gunapala, S.D. ; Ting, D.Z. ; Hill, C.J. ; Nguyen, J. ; Soibel, A. ; Rafol, S.B. ; Keo, S.A. ; Mumolo, J.M. ; Lee, M.C. ; Liu, J.K. ; Yang, B.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
22
Issue
24
fYear
2010
Firstpage
1856
Lastpage
1858
Abstract
We describe the demonstration of a 1024 × 1024 pixel long-wavelength infrared focal plane array based on an InAs-GaSb superlattice absorber surrounded by an electron-blocking and a hole-blocking unipolar barrier. An 11.5-μm cutoff focal plane without antireflection coating based on this complementary barrier infrared detector design has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and f/2 cold-stop.
Keywords
III-V semiconductors; focal planes; gallium arsenide; indium compounds; infrared detectors; optical noise; semiconductor superlattices; InAs-GaAs; antireflection coating; complementary barrier infrared detector design; electron-blocking unipolar barrier; hole-blocking unipolar barrier; long-wavelength infrared focal plane array; noise equivalent differential temperature; superlattice absorber; temperature 300 K; temperature 80 K; Dark current; Detectors; Infrared detectors; Quantum wells; Superlattices; Temperature measurement; Infrared detectors; infrared imaging; quantum-well devices;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2089677
Filename
5609186
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