DocumentCode
1360765
Title
A 40 nm 16-Core 128-Thread SPARC SoC Processor
Author
Shin, Jinuk Luke ; Huang, Dawei ; Petrick, Bruce ; Hwang, Changku ; Tam, Kenway W. ; Smith, Alan ; Pham, Ha ; Li, Hongping ; Johnson, Timothy ; Schumacher, Francis ; Leon, Ana Sonia ; Strong, Allan
Author_Institution
Oracle, Santa Clara, CA, USA
Volume
46
Issue
1
fYear
2011
Firstpage
131
Lastpage
144
Abstract
This fourth generation UltraSPARC T3 SoC processor implements sixteen 8-threaded SPARC cores to double on-chip thread count and throughput performance over its previous generation. It enhances glueless scalability to enable up to 512 threads in a 4-way system. A 16-Bank 6 MB L2 Cache, a 512 GB/s hierarchical crossbar and a 312-lane SerDes I/O of 2.4 Tb/s support the bandwidth required by the large number of threads. This SoC processor integrates the memory controller, PCIE 2.0, 10 Gb Ethernet ports, and required cache coherency support in multi-chip configurations. Multiple clock and power domains are used to optimize performance and power for the SoC components. Extensive power management features, from architecture to circuit techniques, optimize both active and idle power. The 377 die includes 1 billion transistors in a flip-chip ceramic package with 2117 pins. The chip is fabricated in TSMC´s 40 nm high-performance process with 11 Cu metals and four transistor types.
Keywords
cache storage; multi-threading; system-on-chip; L2 cache; UltraSPARC T3 SoC processor; clock domain; flip-chip ceramic package; glueless scalability; hierarchical crossbar; power domain; power management; system-on-chip; Clocks; Message systems; Multicore processing; Synchronization; System-on-a-chip; Asynchronous crossing; L2 Cache; SerDes; System-On-Chip (SoC); UltraSPARC T3; body-bias; clocking; coherency; electromigration (EM); idle power; interconnect crossbar; multi-core; multi-threaded; multiple power domain; power grid; power management; reliability; throughput performance;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2010.2080491
Filename
5609225
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