Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

Author

Jaekyun Kim ; Joosung Kim ; Youngjo Tak ; Suhee Chae ; Jun-Youn Kim ; Youngsoo Park

Author_Institution

Samsung Adv. Inst. of Technol., Samsung Electron. Co., Yongin, South Korea

Volume

34

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

1409

Lastpage

1411

Abstract

We report the effect of V-shaped pit size, inverted hexagonal pits embedded in InGaN multiple quantum well, on the reverse leakage current of InGaN light-emitting diodes (LEDs). It was found that the reverse leakage current of InGaN LEDs with larger V-shaped pits is significantly reduced from 1.80 mA down to 3.84 nA at -30 V by several orders of magnitude. We claim that this improvement is accounted for increased Poole-Frenkel barrier height of carrier trapped at the deep centers via enlarged V-pit formation, consequently resulting in lower reverse current of InGaN LEDs.

Keywords

III-V semiconductors; Poole-Frenkel effect; gallium compounds; indium compounds; leakage currents; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; LED; Poole-Frenkel barrier height; V-shaped pit size; current 1.80 mA to 3.84 nA; deep centers; inverted hexagonal pits; light-emitting diodes; multiple quantum well; reverse leakage current; voltage -30 V; Current measurement; Gallium nitride; Leakage currents; Light emitting diodes; Quantum well devices; Scanning electron microscopy; Tunneling; GaN; V-shaped pit; leakage current; light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2280017

Filename

6601712