• DocumentCode
    1360905
  • Title

    Robust ultrathin oxynitride dielectrics by NH3 nitridation and N/sub 2/O RTA treatment

  • Author

    Pan, Tung Ming ; Lei, Tan Fu ; Chao, Tien Sheng

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    21
  • Issue
    8
  • fYear
    2000
  • Firstpage
    378
  • Lastpage
    380
  • Abstract
    In this paper, a method to grow robust ultrathin (E/sub OT/=28 /spl Aring/) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH/sub 3/ with additional N/sub 2/O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.
  • Keywords
    EPROM; ULSI; dielectric thin films; electron traps; flash memories; nitridation; permittivity; rapid thermal annealing; 28 angstrom; N/sub 2/O; NH/sub 3/; RTA treatment; ULSI devices; bulk trap density; effective dielectric constant; electrical properties; endurance; nitridation; trap generation rate; ultrathin oxynitride dielectrics; Annealing; Chaos; Dielectric constant; Flash memory; MOS capacitors; Robustness; Semiconductor films; Silicon; Substrates; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.852956
  • Filename
    852956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1360905