Title :
Robust ultrathin oxynitride dielectrics by NH3 nitridation and N/sub 2/O RTA treatment
Author :
Pan, Tung Ming ; Lei, Tan Fu ; Chao, Tien Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, a method to grow robust ultrathin (E/sub OT/=28 /spl Aring/) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH/sub 3/ with additional N/sub 2/O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.
Keywords :
EPROM; ULSI; dielectric thin films; electron traps; flash memories; nitridation; permittivity; rapid thermal annealing; 28 angstrom; N/sub 2/O; NH/sub 3/; RTA treatment; ULSI devices; bulk trap density; effective dielectric constant; electrical properties; endurance; nitridation; trap generation rate; ultrathin oxynitride dielectrics; Annealing; Chaos; Dielectric constant; Flash memory; MOS capacitors; Robustness; Semiconductor films; Silicon; Substrates; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
