Title :
Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios
Author :
Shayesteh, M. ; O´Connell, D. ; Gity, F. ; Murphy-Armando, F. ; Yu, R. ; Huet, K. ; Toque-Tresonne, I. ; Cristiano, F. ; Boninelli, S. ; Henrichsen, H.H. ; Petersen, D.H. ; Nielsen, P.F. ; Duffy, R.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll., Cork, Ireland
fDate :
June 26 2014-July 4 2014
Abstract :
The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ideality factor (n) approximately 1.2-1.5 was achieved with LTA. However RTA revealed very high ION/IOFF ratio approximately 107, and n close to 1. Non ideal behavior in LTA diodes is attributed to existence of deep level defects in the junction, contributing to leakage current. Meanwhile ideal behavior of RTA diodes is due to removal of defects in the junction during the high thermal budget.
Keywords :
elemental semiconductors; germanium; laser beam annealing; leakage currents; rapid thermal annealing; semiconductor diodes; semiconductor doping; semiconductor junctions; Ge; LTA diodes; RTA diodes; arsenic doped n+-p junction; carrier concentration; deep level defects; defect removal; dopant activation; high thermal budget; highly activated dopants; laser thermal annealing; leakage current; phosphorus n+-p junction; rapid thermal annealing; Annealing; Ion implantation; Junctions; Leakage currents; Semiconductor diodes; Semiconductor lasers; Temperature measurement; Ge; Laser thermal annealing; dopant activation; ideality factor; junction; leakage current;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6939953
