DocumentCode :
136093
Title :
Thermal processing for continued scaling of semiconductor devices
Author :
Sharma, Shantanu ; Aderhold, W. ; Raman Sharma, K. ; Mayur, A.J.
Author_Institution :
Silicon Syst. Group, Front End Products, Appl. Mater. Inc., Sunnyvale, CA, USA
fYear :
2014
fDate :
June 26 2014-July 4 2014
Firstpage :
1
Lastpage :
6
Abstract :
Scaling of semiconductor devices over past decades has been made possible by continuous innovations in materials engineering as well as device integration and geometries. Thermal processing has been an enabler for manufacturing advanced devices, both as a unit process and in concert with other key technologies like ion implantation, epitaxy, and film deposition. This paper reviews the evolution of annealing technology with a special consideration to thermodynamics, kinetics and integration thermal budgets. Equipment and process innovations to meet ever-changing material and device fabrication requirements are presented.
Keywords :
MOSFET; annealing; thermal engineering; MOSFET; annealing technology; device fabrication; device integration; epitaxy; film deposition; integration thermal budgets; ion implantation; kinetics; materials engineering; semiconductor device continued scaling; thermal processing; thermodynamics; Annealing; Conductivity; Junctions; Logic gates; Materials; Performance evaluation; Silicides; Annealing; Device Integration; Laser Anneal; MOSFET; Millisecond;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
Type :
conf
DOI :
10.1109/IIT.2014.6939954
Filename :
6939954
Link To Document :
بازگشت